This section provides datasheet and the related information on the part number.
Part No |
Maker |
Package |
Description |
Type |
Enquire Us |
K9F2G08U0M-YCB |
SAMSUNG |
|
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
IC |
|
K6X8016C3B-TF70 |
SAMSUNG |
|
512Kx16 bit Low Power Full CMOS Static RAM |
IC |
|
K4D551638D-TC33 |
SAMSUNG |
66pin TSOP-II |
4M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
IC |
|
K4S161622H-TC60 |
SAMSUNG |
50 TSOP II |
512K x 16Bit x 2 Banks Synchronous DRAM |
IC |
|
K4S281632F-TC75 |
SAMSUNG |
|
2M x 16Bit x 4 Banks SDRAM |
IC |
|
K4S641632H-TC75 |
SAMSUNG |
|
1M x 16Bit x 4 Banks Synchronous DRAM |
IC |
|
S5L9286F02 |
SAMSUNG |
|
DIGITAL SIGNAL PROCESSOR FOR CDP |
IC |
|
S1T3361D01-S0B0 |
SAMSUNG |
|
LOW VOLTAGE, POWER NARROW BAND FM IF |
IC |
|
KA22211 |
SAMSUNG |
|
Dual Low Noise EQ AMP |
IC |
|
KA2201 |
SAMSUNG |
|
1.2W Audio Power AMP |
IC |
|
K9F6408U0M |
SAMSUNG |
|
8M x 8Bit NAND Flash Memory |
IC |
|
K9F5608U0M |
SAMSUNG |
|
32M x 8Bit NAND Flash Memory |
IC |
|
K6X8008T2B-Q |
SAMSUNG |
44-TSOP2-400F |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
IC |
|
K4S561633C-R(B)L |
SAMSUNG |
|
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP |
IC |
|
K4S281632C-TC/L75 |
SAMSUNG |
|
2M x 16Bit x 4Banks Synchronous DRAM |
IC |
|
K4S1G0632M-TC75 |
SAMSUNG |
|
64M x 4Bit x 4 Banks Synchronous DRAM |
IC |
|
K4S161622E-TC60 |
SAMSUNG |
|
512K x 16Bit x 2 Banks Synchronous DRAM |
IC |
|
K4D553238E-JC50 |
SAMSUNG |
|
2M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
IC |
|
K4D263238E-GC45 |
SAMSUNG |
|
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
IC |
|
K4D263238E-GC33 |
SAMSUNG |
|
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
IC |
|