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    Services : Research : Datasheet

    This section provides datasheet and the related information on the part number.

    Part No: Maker:
    Description:

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    Part No Maker Package Description Type Enquire Us
    M464S1724ETS-L7A00 SAMSUNG   64MB, 128MB Unbuffered SODIMM, 144Pin Unbuffered DIMM based on 128MB E-die (x16)  IC 
    K9K4G08U0M-YCB0 SAMSUNG   4G (512M x 8Bit / 256M x 16Bit) NAND Flash Memory  IC 
    KA567 SAMSUNG DIP8  Telephone, Monolithic phase locked loop system designed to provide a saturated transistor switch to GND  IC 
    K4S561632D-TC75 /1l SAMSUNG 54pin TSOP(II)  4M x 16Bit x 4Banks Synchronous DRAM  IC 
    K9F2808U0C-YCB0 SAMSUNG   128M (16M x 8 Bit) NAND Flash Memory  IC 
    K4S643232F-TC60 SAMSUNG 86 TSOP(II)  512K x 32Bit x 4Banks Synchronous DRAM  IC 
    K4S641632H-TC60 SAMSUNG   SDRAM 64MB H-die (x4, x8, x16)  IC 
    K9D1G08V0M/A-SSB0 SAMSUNG   64MB & 128MB SmartMedia Card  IC 
    K4C561638C-TCD4000 SAMSUNG   Network DRAM 256Mbit   
    K4S561633C-RL1H SAMSUNG   4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP  IC 
    K9K4G08U0M-YCBO SAMSUNG   256M x 16Bit NAND Flash Memory  IC 
    K9K1G08U0M-TS0P48 SAMSUNG   128M x 8Bit NAND Flash Memory  IC 
    K9F1G08U0M-YIB0 SAMSUNG   128M x 8 Bit Bit NAND Flash Memory  IC 
    K6T4008C1B-VB55/70 SAMSUNG   512Kx8 bit Low Power CMOS Static RAM  IC 
    K6X4008C1F-GB55 SAMSUNG   512Kx8 bit Low Power full CMOS Static RAM  IC 
    K6X1008C2D-GB55 SAMSUNG   128K x 8 bit Low Power full CMOS Static RAM  IC 
    K6X4008C1F SAMSUNG   512K x 8bit Low Power full CMOS Static RAM  IC 
    K4S161622H-TC60/75 SAMSUNG   1Mx16 (512K X 16Bit X 2 Banks) Synchronous DRAM  IC 
    K4S161622H SAMSUNG   1Mx16 (512K X 16bit X 2 Banks)Synchronous DRAM  IC 
    K4S161622H-TC60/70 SAMSUNG   1Mx16 (512K X 16bit X 2 Banks) Synchronous DRAM  IC 

    Total 2382 Items [Previous] [Next]

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